Gallium nitride , 99.99%metalsbasis , 25617-97-4

Synonym(s):
Gallium mononitride;Gallium mononitride (GaN)

CAS NO.：25617-97-4

Empirical Formula: GaN

Molecular Weight: 83.73

MDL number: MFCD00016108

EINECS: 247-129-0

PRODUCT Properties

• Melting point: 800 °C (lit.)
• Boiling point: decomposes at >600℃ [KIR78]
• Density: 6.1
• refractive index: 2.70 (27℃)
• form: Powder
• color: Yellow
• Water Solubility: Slightly soluble in hot concentrated sulfuric acid and hot conc. sodium hydroxide. Insoluble in water and dilute acids.
• Crystal Structure: Hexagonal, Wurtzite (Zincite) Structure - Space Group P 63mc
• Sensitive: Moisture Sensitive
• Merck: 14,4351
• Stability: Stability Store under dry argon. Water and moisture sensitive. Incompatible with strong oxidizing agents.
• InChI: InChI=1S/Ga.N
• InChIKey: JMASRVWKEDWRBT-UHFFFAOYSA-N
• SMILES: N#[Ga]
• CAS DataBase Reference: 25617-97-4(CAS DataBase Reference)
• EPA Substance Registry System: Gallium nitride (GaN) (25617-97-4)

Description and Uses

Gallium nitride (GaN) is a wide band gap semiconducting material, which can be used in the development of a variety of electronic devices, such as light emitting diodes (LEDs), and field effect transistors (FETs). It can also be used as a transition metal dopant for spintronics-based applications.

Safety

• Symbol(GHS): GHS07
• Signal word: Warning
• Hazard statements: H317
• Precautionary statements: P280
• Safety Statements: 22-24/25
• WGK Germany: 3
• RTECS: LW9640000
• F: 10-21
• TSCA: Yes
• Toxicity: mouse,LDLo,intraperitoneal,5gm/kg (5000mg/kg),Gigiena Truda i Professional'nye Zabolevaniya. Labor Hygiene and Occupational Diseases. Vol. 9(6), Pg. 45, 1965.